vishay tlug / o / y240. document number 83053 rev. 1.8, 31-aug-04 vishay semiconductors www.vishay.com 1 pb pb-free 19229 e4 universal led, ? 1.8 mm tinted diffused miniplast package features ? three colors for dc and pulse operation luminous intensity categorized end-to-end stackable in centre-to-centre spacing of 0.1" (2.54 mm) lead-free device applications general indicating and lighting purposes parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tluo240. , tluy240. , tlug240. part color, luminous intensity angle of half intensity ( ? ) technology tluo2400 red, i v > 1.6 mcd 20 gaasp on gap tluo2401 red, i v = (4 to 20) mcd 20 gaasp on gap TLUY2400 yellow, i v > 1 mcd 20 gaasp on gap tluy2401 yellow, i v = (2.5 to 12.5) mcd 20 gaasp on gap tlug2400 geen, i v > 1.6 mcd 20 gap on gap tlug2401 green, i v = (4 to 20) mcd 20 gap on gap parameter test condition part symbol value unit reverse voltage v r 6v dc forward current tluo2400 i f 30 ma TLUY2400 i f 30 ma tlug2400 i f 30 ma surge forward current t p 10 si fsm 1a power dissipation t amb 55 c tluo2400 p v 100 mw TLUY2400 p v 100 mw tlug2400 p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 3 s, 2 mm from body t sd 260 c t 5 s, 4 mm from body t sd 260 c thermal resistance junction/ ambient tluo2400 r thja 450 k/w TLUY2400 r thja 450 k/w tlug2400 r thja 450 k/w
www.vishay.com 2 document number 83053 rev. 1.8, 31-aug-04 vishay tlug / o / y240. vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified red tluo240. 1) in one packing unit i vmin /i vmax 0.5 yellow tluy240. 1) in one packing unit i vmin /i vmax 0.5 green tlug240. 1) in one packing unit i vmin /i vmax 0.5 parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 10 ma tluo2400 i v 1.6 2 mcd tluo2401 i v 4520mcd dominant wavelength i f = 10 ma d 612 625 nm peak wavelength i f = 10 ma p 630 nm angle of half intensity i f = 10 ma ? 20 deg forward voltage i f = 20 ma v f 23v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 10 ma TLUY2400 i v 14 mcd tluy2401 i v 2.5 8 12.5 mcd dominant wavelength i f = 10 ma d 581 594 nm peak wavelength i f = 10 ma p 585 nm angle of half intensity i f = 10 ma ? 20 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 10 ma tlug2400 i v 1.6 5 mcd tlug2401 i v 41220mcd dominant wavelength i f = 10 ma d 562 575 nm peak wavelength i f = 10 ma p 565 nm angle of half intensity i f = 10 ma ? 20 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf
vishay tlug / o / y240. document number 83053 rev. 1.8, 31-aug-04 vishay semiconductors www.vishay.com 3 typical characteristics (t amb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature figure 3. forward current vs. pulse length 0 20 40 60 80 100 0 20406080100 t amb - ambient t emperature ( c) 18840 p - power dissipation ( mw ) v red, yellow , green 0 5 10 15 20 25 30 35 40 0 102030405060708090100 t amb - ambient temperature ( c) 18841 i - forward current ( ma ) f red, yellow , green 0.01 0.1 1 10 1 10 100 1000 10000 t p - pulse length ( ms ) 100 95 10093 i - forward current ( ma ) f green, yellow orange red t p /t= 0.01 0.02 0.05 0.1 0.2 1 0.5 t amb 55 c figure 4. rel. luminous intensity vs. angular displacement figure 5. forward current vs. forward voltage figure 6. forward current vs. forward voltage 0.4 0.2 0 0.2 0.4 0.6 95 10094 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity v rel 0.1 1 10 100 012345 v f - forward voltag e(v) 16634 f i - forward current ( ma ) 0.1 1 10 100 1000 95 10086 v f - forward voltag e(v) i - forward current ( ma ) f t p /t = 0.001 t p =10 s red 10 8 6 4 2 0
www.vishay.com 4 document number 83053 rev. 1.8, 31-aug-04 vishay tlug / o / y240. vishay semiconductors figure 7. rel. luminous intensity vs. ambient temperature figure 8. rel. lumin. intensity vs. forw. current/duty cycle figure 9. relative luminous intensity vs. forward current 0 0.4 0.8 1.2 1.6 95 10087 i - relative luminous intensity v rel red i f =10ma t amb - ambient temperature ( c) 20 40 60 80 0 100 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10088 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i - relative luminous intensity v rel 2.0 red i fav = 10 ma, const. i f - forward current ( ma ) 100 red 0.01 0.1 1 10 95 10089 i - relative luminous intensity v rel 10 1 figure 10. relative intensity vs. wavelength figure 11. forward current vs. forward voltage figure 12. rel. luminous intensity vs. ambient temperature 590 610 630 650 670 690 - wavelength ( nm ) red 0 0.2 0.4 0.6 0.8 1.2 95 10090 i - relative luminous intensity v rel 1.0 0.1 1 10 100 1000 10 8 6 4 2 0 95 10030 v f - forward voltag e(v) i - forward current ( ma ) f yellow t p /t = 0.001 t p =10 s 0 0 0.4 0.8 1.2 1.6 95 10031 20 40 60 80 100 i - relative luminous intensity v rel t amb - ambient temperature ( c) yellow i f =10ma
vishay tlug / o / y240. document number 83053 rev. 1.8, 31-aug-04 vishay semiconductors www.vishay.com 5 figure 13. rel. lumin. intensity vs. forw. current/duty cycle figure 14. relative luminous intensity vs. forward current figure 15. relative intensity vs. wavelength yellow 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10260 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i - relative luminous intensity v rel 2.0 yellow i f - forward current ( ma ) 100 0.1 1 10 95 10033 i - relative luminous intensity v rel 10 1 0.01 550 570 590 610 630 0 0.2 0.4 0.6 0.8 1.2 650 95 10039 - - wavelength ( nm ) 1.0 yellow i - relative luminous intensity vrel figure 16. forward current vs. forward voltage figure 17. rel. luminous intensity vs. ambient temperature figure 18. specific luminous intensity vs. forward current 0.1 1 10 100 1000 10 8 6 4 2 0 95 10034 v f - forward voltag e(v) i - forward current ( ma ) f green t p /t = 0.001 t p =10 s 0 0.4 0.8 1.2 1.6 95 10035 i - relative luminous intensity v rel green i f =10ma t amb - ambient temperature ( c) 20 40 60 80 0 100 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10263 500 v rel 2.0 green i - specific luminous intensity i f (ma) 0.5 0.2 0.1 0.05 0.02 1 t p /t
www.vishay.com 6 document number 83053 rev. 1.8, 31-aug-04 vishay tlug / o / y240. vishay semiconductors package dimensions in mm figure 19. relative luminous intensity vs. forward current i f - forward current ( ma ) 100 green 0.1 1 10 95 10037 i - relative luminous intensity v rel 10 1 figure 20. relative intensity vs. wavelength 520 540 560 580 600 0 0.2 0.4 0.6 0.8 1.2 620 95 10038 - - wavelength ( nm ) 1.0 green i - relative luminous intensity vrel 95 11262
vishay tlug / o / y240. document number 83053 rev. 1.8, 31-aug-04 vishay semiconductors www.vishay.com 7 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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